vishay tlms310. document number 83170 rev. 1.4, 31-aug-04 vishay semiconductors www.vishay.com 1 e3 pb pb-free 19225 smd led in plcc-2 package description these devices have been designed to meet the increasing demand for surface mounting technology. the package of the tlms310. is the plcc-2 (equiv- alent to a size b tantalum capacitor). it consists of a lead frame which is embedded in a white thermoplast. the reflector inside this package is filled up with clear epoxy. features ? smd leds with exceptional brightness luminous intensity categorized compatible with automatic placement equipment eia and ice standard package compatible with infrared, vapor phase and wave solder processes according to cecc available in 8 mm tape low profile package non-diffused lens: excellent for coupling to light pipes and backlighting low power consumption luminous intensity ratio in one packaging unit i vmax /i vmin 2.0, optional 1.6 lead-free device applications automotive: backlighting in dashboards and switches telecommunication: indicator and backlighting in telephone and fax indicator and backlight for audio and video equipment indicator and backlight in office equipment flat backlight for lcds, switches and symbols general use parts table absolute maximum ratings t amb = 25 c, unless otherwise specified tlms310. part color, luminous intensity angle of half intensity ( ? ) technology tlms3100 red, i v > 2.5 mcd 60 gaasp on gap TLMS3101 red, i v = (4 to 12.5) mcd 60 gaasp on gap parameter test condition symbol value unit reverse voltage v r 6v dc forward current t amb 60 c i f 30 ma surge forward current t p 10 si fsm 0.5 a power dissipation t amb 60 c p v 100 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c
www.vishay.com 2 document number 83170 rev. 1.4, 31-aug-04 vishay tlms310. vishay semiconductors optical and electrical characteristics t amb = 25 c, unless otherwise specified red tlms310. 1) in one packing unit i vmax /i vmin 1.6 typical characteristics (t amb = 25 c unless otherwise specified) storage temperature range t stg - 40 to + 100 c soldering temperature t 5 s t sd 260 c thermal resistance junction/ ambient mounted on pc board (pad size > 16 mm 2 ) r thja 400 k/w parameter test condition part symbol min ty p. max unit luminous intensity 1) i f = 10 ma tlms3100 i v 2.5 7.5 TLMS3101 i v 4 12.5 mcd dominant wavelength i f = 10 ma d 624 636 nm peak wavelength i f = 10 ma p 640 nm angle of half intensity i f = 10 ma ? 60 deg forward voltage i f = 20 ma v f 2.0 2.6 v reverse voltage i r = 10 av r 6v junction capacitance v r = 0, f = 1 mhz c j 7.0 pf temperature coefficient of v f i f = 20 ma tc vf - 1.8 mv/k temperature coefficient of d i f = 10 ma tc d 0.05 nm/k parameter test condition symbol value unit figure 1. power dissipation vs. ambient temperature 100 80 60 40 0 25 50 75 100 125 p - power dissipation ( mw ) v t amb - ambient temperature ( c) 95 10904 20 0 figure 2. forward current vs. ambient temperature for ingan 0 10 20 30 40 60 i - forward current ( ma) f 95 10905 50 t amb - ambient temperature ( c) 100 80 60 40 20 0
vishay tlms310. document number 83170 rev. 1.4, 31-aug-04 vishay semiconductors www.vishay.com 3 figure 3. pulse forward current vs. pulse duration figure 4. rel. luminous intensity vs. angular displacement figure 5. forward current vs. forward voltage 0.01 0.1 1 10 1 10 100 1000 10000 t p - pulse length ( ms ) 100 95 9985 i - forward current ( ma ) f dc t p /t = 0.005 0.5 0.2 0.1 0.01 0.05 0.02 t amb <60 c 0.4 0.2 0 0.2 0.4 0.6 95 10319 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 i - relative luminous intensity vre l 0.1 1 10 100 012345 v f - forward voltag e(v) 16634 f i - forward current ( ma ) figure 6. rel. luminous intensity vs. ambient temperature figure 7. change of forward voltage vs. ambient temperature figure 8. change of dominant wavelength vs. ambient temperature 0.0 0.4 0.8 1.2 1.6 2.0 0 20406080100 t amb ? ambient temperature ( c ) 16635 i ?relative luminous intensity vrel ?300 ?250 ?200 ?150 ?100 ?50 0 50 100 150 200 0 20406080100 t amb ? ambient temperature ( c ) 16636 v ? change of forward voltage (mv) f ?3 ?2 ?1 0 1 2 3 4 5 0 20406080100 t amb ? ambient temperature ( c ) 16637 ? change of dom. wavelength (nm) d
www.vishay.com 4 document number 83170 rev. 1.4, 31-aug-04 vishay tlms310. vishay semiconductors package dimensions in mm figure 9. relative luminous intensity vs. forward current 0.01 0.10 1.00 10.00 1.00 10.00 100.00 v f ? forward current ( ma ) 16638 i ?relative luminous intensity vrel figure 10. relative intensity vs. wavelength 0.0 0.2 0.4 0.6 0.8 1.0 1.2 550 590 630 670 710 750 16639 i ?relative luminous intensity vrel ? wavelength ( nm ) 95 11314 mounting pad layout 3.5 0.2 0.85 1.65 + 0.10 - 0.05 pin identification 2.8 + 0.15 2.2 ? 2.4 3 + 0.15 1.2 2.6 (2.8) 1.6 (1.9) 4 4 area covered with solder resist dimensions: ir and vaporphase (wave soldering) technical drawings according to din specifications drawing-no. : 6.541-5025.01-4 issue: 7; 05.04.04 ca
vishay tlms310. document number 83170 rev. 1.4, 31-aug-04 vishay semiconductors www.vishay.com 5 ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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